| PART |
Description |
Maker |
| 3VD395650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD297650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD379500YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD186600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 2220GC103KAZ1A 1808AA105JAZ1A 1808GC223JAZ1A 1808H |
CAP 0.01UF 2000V 10% X7R SMD-2220 TR-7 FLEXITERM CAPACITOR, CERAMIC, MULTILAYER, 2000 V, X7R, 0.01 uF, SURFACE MOUNT, 2220
High Voltage MLC Chips FLEXITERM
High Voltage MLC Chips FLEXITERM
|
AVX, Corp.
AVX Corporation
|
| OD-148-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| T497B475K006BT6210 T497A106K010BH6110 |
HIGH GRADE COTS TANTALUM CHIPS
|
Kemet Corporation
http://
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
