| PART |
Description |
Maker |
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1518JV18-250BZC CY7C1518JV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1518KV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
2M X 18 DDR SRAM, 0.45 ns, PBGA165
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| MSM27V3255CZ |
1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| MR27V3255D |
1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 8-Double Word x 32-Bit or 16-Word x 16-Bit Page Mode One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MSM27C3255CZ |
1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| CY7C1568KV18-500BZXC CY7C1568KV18-500BZC CY7C1570K |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| PD46364092BF1-E40-EQ1 PD46364182BF1-E40-EQ1 PD4636 |
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| MSM27C1655CZ |
524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM 524,288 -双字× 32位或1048576字16 -双字× 32位或8字16位页面模式一次性可编程
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| MC-45D32CD641KFA-C75 MC-45D32CD641KFA-C80 MC-45D32 |
32 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
