| PART |
Description |
Maker |
| T529P106M010AAE200 |
Tantalum, Polymer Tantalum, Reduced Volume, T529, 10 uF, 20%, 10 V, 2012, SMD, Polymer, Substrate, 200 mOhms, Height Max= 1mm
|
Kemet Corporation
|
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SI9804DY |
20-V (D-S) Single
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| MS-106-1 MS-106-2 MS-106-3 |
Reduced-miniature Reed Sensor
|
Reed Relays and Electronics
|
| MT49H16M16 MT49H16M16FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|
| C527RT320-0303 C460RT320-0305 C470RT320-0301 C527R |
Reduced Forward Voltage 3.1 V Typical at 20 mA
|
Cree, Inc
|
| IPL65R165CFD |
Reduced board space consumption
|
Infineon Technologies A...
|
| SI4888DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI9422DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4888DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
