| PART |
Description |
Maker |
| HY5DS113222FM-28 HY5DS113222FM-33 HY5DS113222FM-36 |
GDDR SDRAM - 512Mb
512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
| HY5DV281622DT HY5DV281622DT-33 HY5DV281622DT-36 HY |
128M(8Mx16) GDDR SDRAM
GDDR SDRAM - 128Mb
|
Hynix Semiconductor
|
| K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2 |
128Mbit GDDR SDRAM
|
Samsung semiconductor
|
| HY5DU573222AFM-36 HY5DU573222AFM-28 HY5DU573222AFM |
GDDR SDRAM - 256Mb
|
Hynix Semiconductor
|
| W9412G2CB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
| K4D263238I-VC |
128M-Bit GDDR SDRAM
|
Samsung Electronics
|
| HY5DV281622DT-5 HY5DV281622DT-36 HY5DV281622DT-33 |
128M(8Mx16) GDDR SDRAM 8M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Hynix Semiconductor, Inc.
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
| K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144
4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5DU281622ETP-25 HY5DU281622ETP-26 HY5DU281622ETP |
128M(8Mx16) gDDR SDRAM
8M X 16 DDR DRAM, 0.6 ns, PDSO66
8M X 16 DDR DRAM, 0.55 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
