| PART |
Description |
Maker |
| RTP21025-11 |
This HPA Module is a high gain and compact amplifier module for WCDMA and LTE Repeater use.
|
RFHIC
|
| RFP-0850-33-27 |
HPA Module
|
RFHIC
|
| RFP-2140-39-27N |
HPA Module
|
RFHIC
|
| RFP-0895-33-27 |
HPA Module
|
RFHIC
|
| RFP-0881-45-27 |
HPA Module
|
RFHIC
|
| HPA-8003 |
HPA-8003 H-Plane Array
HPA-8003 H-Plane Array
|
TDK Semiconductor
ETC
TDK[TDK Electronics]
|
| TGA2925-SG |
5.6 Watt 3.5GHz Packaged HPA
|
TriQuint Semiconductor
|
| TGA2503-EPU |
Ku Band HPA
13 - 17 GHz 2 Watt, 32dB Power Amplifier
|
TriQuint Semiconductor
|
| HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HAS030ZG-A HAS030ZJ-A HAS030YG HAS030YG-A HAS030YH |
Filter Module with Resistor Network 腐殖酸系 30
Xfmr Module 腐殖酸系 30
Transformers Only Module
HAS SERIES - 30 WATT
|
Atmel, Corp.
Positronic Industries, Inc.
POWER-ONE[Power-One]
|
| HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
