| PART |
Description |
Maker |
| HY5S5B6ELF-HE HY5S5B6ELF-SE HY5S5B6ELFP-HE HY5S5B6 |
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| H55S1222EFP-60E H55S1222EFP-60M H55S1222EFP-75E H5 |
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
4M X 32 STATIC COLUMN DRAM, 5.4 ns, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| HY5Y7A2DLM HY5Y7A2DLMP-HF |
Mobile SDR - 512Mb
|
Hynix Semiconductor
|
| MB82DBS08314A-80L |
256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| BD3532EFV BD3533F08 BD3533EKN BD3533F BD3533FVM BD |
Termination Regulators for DDR-SDRAMs
|
Rohm
|
| BD3538HFN-TR BD3538F BD3538F-E2 |
Termination Regulator for DDR-SDRAMs
|
ROHM
|
| BD3533F BD3533FVM |
Termination Regulator for DDR-SDRAMs
|
ROHM
|
| BD3537F BD3537F08 |
Termination Regulators for DDR-SDRAMs
|
Rohm
|
| K4S510732B-TC1L K4S510732B-TC1H K4S510732B-TL1L K4 |
Stacked 512Mbit SDRAM 堆积512兆内
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M390S2858DT1-C7C M390S2858DT1 M390S2858DT1-C7A |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD 128Mx72 SDRAM的内存与锁相
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYB25D512400BC-5 HYB25D512160BC-5 HYB25D512400BT-6 |
512Mbit Double Data Rate (DDR) Components
|
Infineon
|
| M65KG512AB6W9 M65KG512AB M65KG512AB6W8 M65KG512AB8 |
512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM
|
STMicroelectronics
|
