| PART |
Description |
Maker |
| MGFC40V6472A |
6.4-7.2 GHz BAND 10W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V5258_04 MGFC40V5258 MGFC40V525804 |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| STK401-010 STK400-010 STK401-210 STK400-100 STK400 |
3ch AF Power Amplifier(Split Power Supply) 10W 10W 10W,THD=0.4% 3通道自动对焦功率放大器（斯普利特电源0W0W的功0W，总谐波失真\u003d 0.4
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
ETC
SANYO[Sanyo Semicon Device]
|
| PH3134-10M |
Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| TA099-107-41-40 |
9.9 - 10.7 GHz 10W Amplifier
|
Transcom, Inc.
|
| PE8411 |
N FEMALE CIRCULATOR 2-4 GHz 10w
|
Pasternack Enterprises, Inc.
|
| PE8311 |
N FEMALE ISOLATOR 2-4 GHz 10w
|
Pasternack Enterprises, Inc.
|
| T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
