PART |
Description |
Maker |
BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
CBS05F30 CBS05F30-14 |
Schottky Barrier Diode Silicon Epitaxial Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V. M/A-COM Technology Solutions, Inc.
|
5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc.
|
BAT54SDW BAT54CDW BAT54ADW BAT54BRW-TP BAT54SDW-TP |
200mWatt, 30Volt Schottky Barrier Diode DIODE SCHOTTKY 200MW 30V SOT363 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
ZHCS500 UZHCS500 ZHCS500TA |
DIODE SCHOTTKY SOT-23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a> SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT SOT23 SILICON HIGH CURRENT 0.5 A, SILICON, SIGNAL DIODE High Current Schottky Diode
|
ZETEX[Zetex Semiconductors] Diodes Incorporated
|
FME-220A |
Schottky Barrier Diode - 90V/100V 100V, 20A Schottky barrier diode in TO220F package 100V/ 20A Schottky barrier diode in TO220F package 100V, 20A,Schottky Barrier Diode(100V,20A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE, TO-220AB
|
SANKEN[Sanken electric] Sanken Electric Co., Ltd.
|
RB521ZS-301 |
Schottky Barrier Diode 0.1 A, 30 V, SILICON, SIGNAL DIODE ULTRA SMALL, GMD2, 2 PIN Schottky Barrier Diode
|
Rohm Incon, Inc.
|
5082-2207 50822207 |
SCHOTTKY MEDIUM BARRIER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE From old datasheet system
|
ASI[Advanced Semiconductor] Advanced Semiconductor, Inc.
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
1SS88 |
Silicon Schottky Barrier Diode for CATV Balanced Mixer Schottky Barrier Diodes for Detection and Mixer
|
Hitachi Semiconductor
|