| PART |
Description |
Maker |
| PBRN123E PBRN123EK PBRN123ES PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 2.2 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k??
|
NXP Semiconductors
|
| PBRP113ZT PBRP113ZT215 |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PBSS301ND |
20 V, 4 A NPN low VCesat (BISS) transistor 20伏，4安NPN型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBRP123YT |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW
|
NXP Semiconductors
|
| PBRP113ET |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW
|
NXP Semiconductors
|
| PBSS4032SN |
30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS2515M |
15 V, 0.5 A NPN low VCEsat (BISS) transistor 500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS302ND |
40 V, 4 A NPN low VCEsat (BISS) transistor 4000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS4032NZ |
30 V, 4.9 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
|
