| PART |
Description |
Maker |
| HB52D88GB-A6F HB52D88GB-A6FL HB52D88GB-B6F HB52D88 |
64 MB Unbuffered SDRAM Micro DIMM 8-Mword 垄楼 64-bit, 100 MHz Memory Bus, 1-Bank Module (4 pcs of 8 M 垄楼 16 components) PC100 SDRAM
64 MB Unbuffered SDRAM Micro DIMM 8-Mword ′ 64-bit, 100 MHz Memory Bus, 1-Bank Module (4 pcs of 8 M ′ 16 components) PC100 SDRAM
|
Elpida Memory
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| HB52D48GB |
32 MB Unbuffered SDRAM Micro DIMM(32MB 未缓冲同步DRAM DIMM)
|
Hitachi,Ltd.
|
| M374S6453CTS-L7C M347S6453CTS-C1H M347S6453CTS-C1L |
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYMD532646A6-H HYMD532646A6-K HYMD532646A6-L HYMD5 |
DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| GMM2649233EFTG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| M470L6524DU0-LCC M470L2923DV0-CA2 M470L2923DV0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| EBE51UD8AEFA-5C-E EBE51UD8AEFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) 512MB的无缓冲DDR2 SDRAM DIMM内存400字64位，1个等级）
|
Elpida Memory, Inc.
|
| HYMD116725B8J HYMD116725B8J-J HYMD116725BL8J-J |
16Mx72|2.5V|J|x9|DDR SDRAM - Unbuffered DIMM 128MB
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|
| HYMD216646AL6-K HYMD216646AL6-H HYMD216646A6-H HYM |
Unbuffered DDR SDRAM DIMM
16Mx64|2.5V|M/K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
