PART |
Description |
Maker |
DDB6U75N16W1R |
Diode-Gleichrichter / diode-rectifier H枚chstzul盲ssige Werte / maximum rated values Diode-Gleichrichter / diode-rectifier H?chstzul?ssige Werte / maximum rated values
|
Infineon Technologies AG
|
IRF6655 |
DirectFET Power MOSFET Typical values (unless otherwise specified)
|
International Rectifier
|
FF600R16KF4 |
Maximum rated values / Electrical properties
|
eupec GmbH
|
BSM100GP60 |
Hochstzulassige Werte / Maximum rated values
|
EUPEC[eupec GmbH]
|
FZ1800R12KL4C |
Hochstzulassige Werte / Maximum rated values
|
eupec GmbH
|
MKC1858 |
C-values 0.01 μF - 0.33 μF, Voltage 63 - 100 VDC, Flat and linear TC, PCM 5
|
Vishay
|
MKT1813 |
C-values 470 pF - 22 μF, Voltage 63 - 1000 VDC, Low Profile, AXIAL
|
Vishay
|
FZ1200R12KE3 |
Hochstzulassige Werte / maximum rated values IGBT Power Module
|
eupec GmbH
|
FZ1200R33KF2-B5 EUPEC-FZ1200R33KF2-B5 |
Hochstzulassige Werte / Maximum rated values Hochstzulassige话高最大额定 IGBT Power Module
|
EUPEC GMBH ?CO KG
|
BSM75GB120DLC |
Hchstzulssige Werte Maximum rated values 170 A, 1200 V, N-CHANNEL IGBT
|
Infineon Technologies AG ETC EUPEC[eupec GmbH]
|
C1206C8232RAC C1206C10412RAC C1206C1042RAC C1206C1 |
Surface Mount Ceramic Chip Capacitors Extended Values 1206, X7R Dielectric, 25, 50, 100, 200 Volts
|
KEMET[Kemet Corporation]
|
KP1830 |
C-values 100 pF - 0.033 μF, Voltage 63 - 630 VDC, High pulse load, Tolerances to 1%, Low losses, PCM 5
|
Vishay
|