| PART |
Description |
Maker |
| SM520B SM520B12 SM560B SM540B |
Voltage 20V ~ 60V 5.0 Amp Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SCS120PR |
VOLTAGE 20V ~ 40V 1.0 AMP Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SP206011 |
Voltage 60V 20.0 Amp Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SM330AS SM320AS SM3200AS SM350AS SM360AS SM3100AS |
Voltage 20V ~ 200V 3.0 Amp Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| FDMS5352 |
60V N-Channel Power Trench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel
60V N-Channel Power TrenchMOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| KI6968BEDQ |
Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| 2SA1834R 2SB1516P 2SB1516Q 2SB1516N 2SC5119 2SD211 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 15A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-252VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
µP Supervisory Circuits in 4-Bump (2 x 2) Chip-Scale Package
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-252VAR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 20V的五（巴西）总裁|5A一（c）|52VAR
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-252VAR 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 4A条一（c）|52VAR
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 2A I(C) | TO-252VAR 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|甲一（c）|52VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 6A I(C) | TO-252VAR 晶体管|晶体管|进步党| 100V的五（巴西）总裁| 6A条一（c）|52VAR
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-252VAR
|
Semtech, Corp.
Maxim Integrated Products
Rochester Electronics, LLC
Amphenol, Corp.
|
| HFCN-1320 |
HI PASS FLTR /SURF MT / T&R / RoHS
|
Mini-Circuits
|
| FQT13N06LTF |
60V N-Channel Logic level QFET; Package: SOT-223; No of Pins: 3; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
| ISL21009BMB841EP ISL21009CMB850EP ISL21009BMB850EP |
High Voltage Input Precision, Low Noise FGA™ Voltage References; Temperature Range: -55°C to 125°C; Package: 8-SOIC T&R THREE TERM VOLTAGE REFERENCE, PDSO8
High Voltage Input Precision, Low Noise FGA Voltage References
|
Intersil, Corp.
Intersil Corporation
|
