PART |
Description |
Maker |
2SD2444K |
Power Transistor (15V, 1A)
|
Rohm
|
ZXTP25015DFHTA ZXTP25015DFH |
15V, SOT23, PNP medium power transistor
|
ZETEX[Zetex Semiconductors]
|
ZXTP25015DFH ZXTP25015DFHTA |
15V, SOT23, PNP medium power transistor
|
Diodes Incorporated
|
2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC Corp. NEC[NEC]
|
IRG4PH50U |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
DSS3515M-15 |
15V PNP LOW VCE(sat) TRANSISTOR
|
Diodes Incorporated
|
IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条) INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A) 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
ZXTDAM832TA |
DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR
|
Diodes Incorporated
|
IRG4PC40S IRG4PC40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A) 600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
DSS3515M-7B |
15V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
DSS2515M-7B |
15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
IRGPC20F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
|
IRF[International Rectifier]
|