| PART |
Description |
Maker |
| BZT52C10 BZT52C10-7 BZT52C11 BZT52C11-7 BZT52C12 B |
SURFACE MOUNT ZENER DIODE
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 2.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 7.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Dual Negative-Edge-Triggered J-K Flip-Flop With Clear And Preset 16-TSSOP -40 to 85 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 36 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
|
Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
|
| 1N3305 1N3307B 1N3312B 1N3323B 1N3314B 1N3310B 1N3 |
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 22 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 140 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 10 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
Zener Voltage Regulator Diode 齐纳稳压二极
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 9.1 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 160 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
SILICON 50 WATT ZENER DIODES
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
|
TE Connectivity, Ltd.
Hammond Manufacturing Co., Ltd.
STMicroelectronics N.V.
B＆K Precision, Corp.
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
| P600M6A10 P600B6A1 P600A6A05 P600G6A4 P600G P600J |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 一般整流（电压范围- 50000伏特，电六点○安培）
|
WINGS[Wing Shing Computer Components]
Vishay Intertechnology, Inc.
|
| MCR101-X-XX-T92-B MCR101-X-XX-T92-K MCR101L-X-XX-T |
FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8 A, 200 V, SCR, TO-92
FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8 A, 400 V, SCR, TO-92
FH LW SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 跳频龙运灵敏栅极可控硅整流装置，反向阻断晶闸
|
??『绉???′唤??????
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| HZM22N HZM4.3N HZM4.7N HZM15N HZM18N HZM16N HZM9.1 |
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
7.93 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
15.69 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE SC-59A, 3 PIN
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Silicon Epitaxial Planar Zener Diode for Stabilizer
|
Omron Electronics, LLC
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| UG8JT UGF8JT UGB8HT UG8HT |
Ultrafast Rectifiers, Forward Current 8.0A, Reverse Recovery Time 25ns, Reverse Voltage 500 to 600V
|
VISHAY
|
| 74AUP1G32GW125 |
Low-power 2-input OR gate; Package: SOT353-1 (TSSOP5); Container: Reel Pack, Reverse, Reverse
|
NXP SEMICONDUCTORS
|
| RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五（DRM）的|00VAR84
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
| 1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
Diodes
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
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Vishay Beyschlag
|
| TIC126A12 |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| 1N3005B 1N2995B 1N2976A 1N2976B 1N2970 1N4000A 1N3 |
MKDSO 2,5/ 2-R
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 14 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AA
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 50 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AA
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 150 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AA
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 19 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AA
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 17 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AA
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 7.5 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AA
SILICON 10 WATT ZENER DIODES
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MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
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