| PART |
Description |
Maker |
| W942516CH W942516CH-75 W942516CH-5 W942516CH-6 |
DDR SDRAM (Double Data Rate)
4M X 4 BANKS X 16 BIT DDR SDRAM
From old datasheet system
|
Winbond Electronics
|
| M14D5121632A M14D5121632A-2.5BG M14D5121632A-3BG |
8M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M13S128324A09 M13S128324A-4LG M13S128324A-4BG M13S |
4M X 32 DDR DRAM, 0.7 ns, PQFP100
1M x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
Elite Semiconductor Mem...
|
| V58C265804S |
HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8 高性能2.5米8 DDR SDRAM银行X 2Mbit的8
|
Mosel Vitelic, Corp.
|
| W9425G6JH |
4M X 4 BANKS X 16 BITS DDR SDRAM
|
Winbond
|
| W9425G6EH |
4 M × 4 BANKS × 16 BITS DDR SDRAM
|
Winbond
|
| W9464G6JH |
1M ?4 BANKS ?16 BITS DDR SDRAM
|
Winbond
|
| V58C265804S |
HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8
|
MOSEL[Mosel Vitelic, Corp]
|
| W9825G6DH-6C |
4M 4 BANKS 16 BITS SDRAM 16M X 16 DDR DRAM, 5.4 ns, PDSO54
|
Winbond Electronics, Corp.
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| EBD11ED8ABFB-6B EBD11ED8ABFB-7B EBD11ED8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words ?72 bits, 2 Banks)
|
Elpida Memory
|
| ASM4SSTVF32852 ASM4SSTVF32852-114BT ASM4ISSTVF3285 |
DDR 24-Bit to 48-Bit Registered Buffer
SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PBGA114
Specialty Clock Management
2.3 V -2.7 V, DDR 24-bit to 48-bit registered buffer
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
|
