| PART |
Description |
Maker |
| DTB743XM DTB743XE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
| DTD713ZE09 DTD713ZETL |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rohm
|
| 2SB1386 |
Low VCE(sat). VCE(sat) = -0.35V (Typ.) Excellent DC current gain
|
TY Semiconductor Co., Ltd
|
| 2SA1385-Z |
Low VCE(sat):VCE(sat)=-0.18 V TYP.Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
| 2SD1615 |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
| 2SB1115 |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
| 2SD1615A |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
| 2SD1766 |
Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).
|
TY Semiconductor Co., Ltd
|
| NSS40600CF8T1G_07 NSS40600CF8T1G NSS40600CF8T1G07 |
40 V, 7.0 A, Low VCE(sat) PNP Transistor(40V, 7.0A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| IXGH28N60B |
Ultra Low VCE(sat) IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.0V???缂??????朵?绠?甯?????锛?
|
IXYS CORP
|
| ENA1756A |
Bipolar Transistor 30V, 1.5A, Low VCE(sat) NPN Dual CPH6
|
ON Semiconductor
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
