| PART |
Description |
Maker |
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 2SC2790 |
SILICON NPN TRIPLE DIFFUSED TYPE
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION
|
Toshiba Semiconductor
|
| 2SC2555 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING AND HIGH SPEED DC-DC CONVERTER APPLICATIONS
|
TOSHIBA
|
| 2SC4346-Z 2SC4346 |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING HIGH VOLTAGE SWITCHING
|
NEC
|
| 2SC2552 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| 2SC2552 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| 2SA1714 2SA1714K 2SA1714L 2SA1714M |
PNP high-speed switching darlington transistor
PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING 进步党硅外延功率晶体管（达林顿连接笔记本高）高速开
|
NEC Corp.
NEC, Corp.
|
| SMBD914 MMBD914 SMBD914/MMBD914 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| 2SC2792 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| H7N0608AB |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
