| PART |
Description |
Maker |
| BCP51115 |
45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| ORD228VL |
General Purpose Miniature (Medium-level Load 100 V Max.)
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| 2PA1774Q115 |
PNP general-purpose transistor - Complement: 2PC4617Q ; fT min: 100 MHz; hFE max: 270 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 150 mW; VCEO max: 40 V; Package: SOT416 (SC-75); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| MPAT-02000220-3706 MPAT-10701250-6020 MPAT-0750085 |
2000 MHz - 2200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.7 dB INSERTION LOSS-MAX
10700 MHz - 12500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7500 MHz - 8500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.8 dB INSERTION LOSS-MAX
7900 MHz - 8400 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
7250 MHz - 7750 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
2100 MHz - 2700 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX
17700 MHz - 20200 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
17300 MHz - 18100 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
12750 MHz - 13250 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.5 dB INSERTION LOSS-MAX
5845 MHz - 6430 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.2 dB INSERTION LOSS-MAX
|
MITEQ, Inc.
|
| OP-27EIH OP-27EIJ8 OP-27EIN8 OP-27GIH OP-27GIN8 OP |
OP-AMP, 3000 uV OFFSET-MAX, MBCY8 METAL CAN, TO-5, 8 PIN
OP-AMP, 80 uV OFFSET-MAX, CDIP8 HERMETIC SEALED, CERDIP-8
OP-AMP, PDIP8 PLASTIC, DIP-8
OP-AMP, MBCY8 METAL CAN, TO-5, 8 PIN
OP-AMP, CDIP8 HERMETIC SEALED, CERDIP-8
OP-AMP, 80 uV OFFSET-MAX, PDIP8 PLASTIC, DIP-8
OP-AMP, 180 uV OFFSET-MAX, MBCY8 METAL CAN, TO-5, 8 PIN
OP-AMP, 750 uV OFFSET-MAX, PDIP8 PLASTIC, DIP-8
OP-AMP, 250 uV OFFSET-MAX, PDIP8 PLASTIC, DIP-8
OP-AMP, 500 uV OFFSET-MAX, PDIP8 PLASTIC, DIP-8
OP-AMP, 60 uV OFFSET-MAX, MBCY
DUAL OP-AMP, 150 uV OFFSET-MAX, PDIP
DUAL OP-AMP, 100 uV OFFSET-MAX, PDSO
DUAL OP-AMP, 1500 uV OFFSET-MAX, PDIP8
|
Linear Technology, Corp.
LINEAR TECHNOLOGY CORP
|
| PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
| IRH015020LW02 IRJ008010LW02 IRJ015020LW02 IRH05405 |
1500 MHz - 2000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX
800 MHz - 1000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7.5 dB CONVERSION LOSS-MAX
5400 MHz - 5900 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX
9500 MHz - 10500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8 dB CONVERSION LOSS-MAX
2300 MHz - 2500 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX
8500 MHz - 9600 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8 dB CONVERSION LOSS-MAX
2000 MHz - 4000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7.5 dB CONVERSION LOSS-MAX
12000 MHz - 15000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8.5 dB CONVERSION LOSS-MAX
2100 MHz - 2300 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX
3700 MHz - 4200 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7 dB CONVERSION LOSS-MAX
1000 MHz - 2000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 7.5 dB CONVERSION LOSS-MAX
16000 MHz - 19000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 9 dB CONVERSION LOSS-MAX
10000 MHz - 12000 MHz RF/MICROWAVE IMAGE REJECTION MIXER, 8.5 dB CONVERSION LOSS-MAX
|
MITEQ INC
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| CXT2907A |
High current (max.600mA), Low voltage (max.60V)
|
TY Semiconductor Co., Ltd
|
| HT1260/26OG6 |
2.6kV V[drm] Max., 1260A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
|
