| PART |
Description |
Maker |
| MF1117V-2 |
From old datasheet system
FOR DIGITAL MOBILE TELEPHONE Rx
FOR DIGITAL MOBILE TELEPHONE, Rx
FOR DIGITAL MOBILE TELEPHONE / Rx
GIGATRUE 550 CAT6 PINK STRANDED BULK 250FT
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HYB18L256160BCL-7.5 HYB18L256160BFL-7.5 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
|
Qimonda AG
|
| HYE18L128160BF-7.5 |
DRAMs for Mobile Applications 128-Mbit Mobile-RAM
|
http://
|
| HYB18L128160BC-7.5 HYE18L128160BC-7.5 HYB18L128160 |
DRAMs for Mobile Applications 128-Mbit Mobile-RAM
|
Qimonda AG
|
| STN8810BDS12HPBE STN8810S12 |
STn8810 mobile multimedia application processor with 1-Gbit NAND-Flash and 512-Mbit DDR mobile RAM
|
STMicroelectronics
|
| ICS9248-168 ICS9248YF-168-T |
AMD - K7?Clock Generator for Mobile System
AMD - K7Clock Generator for Mobile System
Frequency Generator & Integrated Buffers
AMD - K7 Clock Generator for Mobile System
AMD K7 System Clock with up to 153MHz Processor Support
AMD - K7⑩ Clock Generator for Mobile System
AMD - K7?/a> Clock Generator for Mobile System
|
Integrated Circuit Syst...
ICST[Integrated Circuit Systems]
|
| HYB18M1G320BF HYE18M1G320BF-7.5 HYB18M1G320BF-7.5 |
DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM 8M X 32 DDR DRAM, 6.5 ns, PBGA90
|
Qimonda AG
http://
|
| 9UMS9633BKILFT 9UMS9633BFILFT ICS9UMS9633BI 9UMS96 |
ULTRA MOBILE PC CLOCK FOR INDUSTRIAL TEMPERATURE RANGE
|
Integrated Device Technology
|
| VC-2R8A80-1635L VC-3R0A80-1668N VC-2R2A80 VC-2R2A8 |
M39012 MIL RF CONNECTOR VCO, 1649.7 MHz - 1686.3 MHz
ASSP for Mobile Telephone ASSP的移动电
ASSP for Mobile Telephone VCO, 719.65 MHz - 758.65 MHz
ASSP for Mobile Telephone VCO, 1620 MHz - 1650 MHz
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Microelectronics
|
| M57714UL 57714UL |
380-400MHz 12.5V,7W,FM MOBILE RADIO 380 - 400MHz2.5V瓦，调频移动通信
380-400MHz 12.5V /7W /FM MOBILE RADIO
380-400MHZ, 12.5V, 7W, FM MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
