PART |
Description |
Maker |
MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT From old datasheet system
|
Toshiba Semiconductor
|
GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
GT5J301 GT5J301_07 GT5J30107 |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
MG150J1BS11 E002085 |
Silicon N channel IGBT(N娌??缁?????????朵?绠? From old datasheet system N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) Silicon N channel IGBT(N沟道绝缘栅双极型晶体
|
Toshiba Semiconductor Toshiba Corporation
|
MBN400C20 |
IGBT Module / Silicon N Channel IGBT Silicon N-channel IGBT
|
Hitachi Semiconductor
|
HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200V/ NPT Series N-Channel IGBT 43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
MIG50J906E |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
MIG20J906E MIG20J906EA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
MG400V2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Mitsubishi Electric Semiconductor Toshiba Corporation
|