| PART |
Description |
Maker |
| 2SC5347AF-TD-E 2SC5347AE-TD-E |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications
|
Sanyo Semicon Device
|
| RF1128 |
BROADBAND MEDIUM POWER SPDT SWITCH
|
RFMD
|
| RF1126 |
BROADBAND MEDIUM POWER SPDT SWITCH
|
RF Micro Devices
|
| MGA-43528-BLKG |
High Linearity 1.93 ?1.995 GHz Power Amplifi er Module
|
AVAGO TECHNOLOGIES LIMITED
|
| MRF183 MRF183S MRF183D |
MRF183R1, MRF183SR1 1.0 GHz, 45 W, 28 V, Lateral N-Channel Broadband RF Power MOSFETs
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| ACPM-5002-BLK ACPM-5002-TR1 |
Multimode PA - UMTS Band2, LTE Band25 and CDMA PCS 3x3mm Power Amplifi er Module with Coupler
|
AVAGO TECHNOLOGIES LIMITED
|
| MRF393 |
The RF Line Controlled “Q?Broadband Power Transistor
The RF Line Controlled 隆掳Q隆卤 Broadband Power Transistor 100W, 30 to 500MHz, 28V
The RF Line Controlled “Q Broadband Power Transistor 100W, 30 to 500MHz, 28V
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| 2SB1132 2SB1132L-X-TN3-T 2SB1132L-P-AB3-R 2SB1132L |
MEDIUM POWER TRANSISTOR 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252
MEDIUM POWER TRANSISTOR 中功率晶体管
|
??『绉???′唤??????
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
