| PART |
Description |
Maker |
| RA13H4047M RA13H4047M-01 RA13H4047M-E01 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V 2 Stage Amp. For MOBILE RADIO
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RA30H4047M10 |
400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA07N4047M_06 RA07N4047M RA07N4047M-101 RA07N4047M |
RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA07M4047M10 |
RoHS Compliance , 400-470MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RA45H4047M_06 RA45H4047M RA45H4047M-101 RA45H4047M |
RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ISA01A301111 |
Wide-band Omni-directional Low Profile 400~470MHz Adhesive
|
List of Unclassifed Manufac...
|
| RA07H4047M-101 RA07H4047M06 RA07H4047M_06 RA07H404 |
RoHS Compliance ,400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PPF360M |
N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| M68732H 68732H M68732 |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 450-470MHz / 7W / FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M67749HR 67749HR |
From old datasheet system
440-470MHz, 12.5V, 7W, FM PORTABLE RADIO
440-470MHz / 12.5V / 7W / FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QIP0640001 |
Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts) 400 A, 600 V, N-CHANNEL IGBT
|
Littelfuse, Inc.
POWEREX[Powerex Power Semiconductors]
|
