| PART |
Description |
Maker |
| 30FWJ2CZ47M |
SCHOTTKY BARRIER TYPE (LOW FORWARD VOLTAGE SCHOTTK BARRIER)
|
TOSHIBA[Toshiba Semiconductor]
|
| MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
|
| MA4E1338 |
Silicon Medium Barrier Schottky Diodes
|
M/A-COM Technology Solution...
|
| MA4E1338A1-1141T MA4E1338A1-1146T MA4E1338A1-287T |
Silicon Medium Barrier Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
| CME7660-526-001 |
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| MA4E2502M MA4E2502 MA4E2502H MA4E2502L |
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes
|
MACOM[Tyco Electronics]
|
| MA4E2532M-1113W MA4E2532 MA4E2532L-1113 MA4E2532L- |
SURMOUNT Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series
|
MACOM[Tyco Electronics]
|
| M4A5 M1P5 M1P1 M2G9 M5D1 M5M1 M1F9 M1B5 M5B5 M7P9 |
MEDIUM CURRENT SILICON RECTIFIERS
(M2Kx) MEDIUM CURRENT SILICON RECTIFIERS
Header, Breakaway Vertical; Number of Contacts:2; Pitch Spacing:2.54mm; Number of Rows:1; Gender:Header; Series:42375; Body Material:PA Polyamide
KK 100 Hdr Assy Bkwy 30 Ckt Tin
MEDIUM CURRENT SILICON RECTIFIERS 中型电流硅整
|
List of Unclassifed Manufac...
EDAL
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Man...
|
| BAT14-020D BAT14-050D BAT14-090D BAT14-110D BAT14- |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Medium barrier) 硅肖特基二极管（梁式引线技术方面的高性能低中等障碍）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| FZT605 FZT605TC |
SOT223 NPN SILICON PLANAR MEDIUM
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Diodes Incorporated
Diodes Inc.
ZETEX[Zetex Semiconductors]
|
