PART |
Description |
Maker |
HM5113165FLTD-6 HM5113165LTD-6 |
128M EDO DRAM (8-Mword × 16-bit) 4k refresh 128M EDO DRAM (8-Mword 隆驴 16-bit) 4k refresh
|
Elpida Memory
|
HM51W17805LJ-6 HM51W17805LJ-7 HM51W17805LTS-6 |
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh 16M EDO DRAM(2-Mword*8-bit)2k Refresh 动态随机存取存储器62-mword*8位)2刷新
|
Hitachi,Ltd.
|
HM5112805LTD-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Renesas Technology / Hitachi Semiconductor
|
HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh 1M X 16 EDO DRAM, 50 ns, PDSO44 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Hitachi,Ltd.
|
HM5117805TT-7 HM5117805 HM5117805J-5 HM5117805J-6 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
|
ELPIDA[Elpida Memory]
|
HB56UW873E-5F HB56UW873E-6F HB56UW873E-F |
64MB Buffered EDO DRAM DIMM 8-Mword × 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M × 8 components) 64MB Buffered EDO DRAM DIMM 8-Mword 隆驴 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M 隆驴 8 components)
|
Elpida Memory
|
HB56UW1673E-5F HB56UW1673E-6F HB56UW1673E-F |
128MB Buffered EDO DRAM DIMM 16-Mword × 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M × 4 components) 128MB Buffered EDO DRAM DIMM 16-Mword 隆驴 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M 隆驴 4 components)
|
Elpida Memory
|
HM5164165F HM5165165F HM5165165FJ-5 HM5165165FJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
|
HITACHI[Hitachi Semiconductor]
|
GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM 4M x 4 CMOS DRAM (EDO) Family
|
Integrated Silicon Solution, Inc. Alliance Semiconductor
|