| PART |
Description |
Maker |
| H5MS5162EFR |
536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
|
Hynix Semiconductor
|
| MT46H8M16LF |
Mobile Double Data Rate (DDR) SDRAM 移动双倍数据速率（DDR）SDRAM内存
|
Micron Technology, Inc.
|
| HYB18M1G16 HYB18M1G160BF-7.5 HYE18M1G161BF-7.5 HYE |
1-Gbit x16 DDR Mobile-RAM 64M X 16 DDR DRAM, 5.5 ns, PBGA60
|
Qimonda AG
http://
|
| H5MS1222EFP-L3E H5MS1222EFP-L3M H5MS1222EFP-J3E H5 |
128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O
4M X 32 DDR DRAM, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| EDD51163DBH-5BLS-F EDD51163DBH-6ELS-F EDD51163DBH- |
32M X 16 DDR DRAM, 5 ns, PBGA60
512M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range), Low Power Function
512M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range), Low Power Function
|
ELPIDA MEMORY INC
|
| EDD12322GBH-7FTS-F EDD12322GBH-6ETS-F EDD12322GBH- |
128M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range)
128M bits DDR Mobile RAM WTR (Wide Temperature Range)
128M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range)
|
Elpida Memory
|
| K4X56163P-L K4X56163PI-LFE_GC3 K4X56163PI-LFE_GC6 |
16Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| K4X1G323PC-L |
32Mx32 Mobile DDR SDRAM
|
Samsung semiconductor
|
| EMD12324P EMD12324P-60 EMD12324P-75 |
512M: 16M x 32 Mobile DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| K4X51323PC-7E K4X51323PC-7EC3 K4X51323PC-7GC3 K4X5 |
16M X32 MOBILE-DDR SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| H5MS1262EFP-L3E H5MS1262EFP-L3M H5MS1262EFP-J3E H5 |
128M (8Mx16bit) Mobile DDR SDRAM
|
Hynix Semiconductor
|
