| PART |
Description |
Maker |
| EIB3439-4P |
3.40-3.90 GHz 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| EID1112A1-5 |
11.70-12.70 GHz 5-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC7179-10 |
7.10-7.90 GHz 10-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC39V5258 MGFC39V5258A |
5.2-5.8 GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| EIC5972-4 |
5.90-7.20 GHz 4-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFK38V2732 |
12.7-13.2 GHz BAND 6W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| EIC1010A-12 |
10.0-10.25 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1010A-20 |
10.00-10.25 GHz 20-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1314A1-5 |
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIB1415-0.3P |
14.0-14.5 GHz 0.3-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1114-2 |
11.0-14.0 GHz 2-Watt Internally Matched Power FET
|
Excelics Semiconductor
|
