| PART |
Description |
Maker |
| IDT709099L9PFI IDT709099L IDT709099L12PF IDT709099 |
From old datasheet system
HIGH-SPEED 128K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
128K x 8 Sync, Dual-Port RAM, PipleLined/FLow-Through
|
IDT[Integrated Device Technology]
|
| CY27H010-30ZC CY27H010-35JC CY27H010-35WMB CY27H01 |
128K x 8 High-Speed CMOS EPROM
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PQCC32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PDSO32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PDIP32
128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PQCC32
From old datasheet system
|
Cypress Semiconductor, Corp.
Atmel, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| W24L010A W24L010A-10 W24L010A-12 W24L010A-15 W24L0 |
From old datasheet system
Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDIP32
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| W24010AC |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM）的
|
Winbond Electronics, Corp.
|
| GS840E18AB-150 GS840E18AB-150I GS840E18AGT-150I GS |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS840FH36AT-8I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
| IS63LV1024-8KL IS63LV1024L-10HL IS63LV1024L-10KLI |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Integrated Silicon Solution, Inc.
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
|
Sony, Corp.
|
| GS840F18AGT-7.5I GS840F36AGT-7.5I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| EDI8L32128V12AC EDI8L32128V12AI EDI8L32128V15AC ED |
12ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
15ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
20ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
| CY7C1340G-133AXC CY7C1340G-133AXI CY7C1340G-200AXC |
128K X 32 CACHE SRAM, 2.6 ns, PQFP100
4-Mbit (128K x 32) Pipelined DCD Sync SRAM
|
CYPRESS SEMICONDUCTOR CORP
|
| IS61C12816NBSP IS61C12816-15T IS61C12816-12T IS61C |
128K x 16 HIGH-SPEED CMOS STATIC RAM 128K X 16 STANDARD SRAM, 15 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM 128K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
