| PART |
Description |
Maker |
| EBE41FE4ACWT-6E-E EBE41FE4ACWT |
4GB Fully Buffered DIMM
|
Elpida Memory
|
| EBE42FE8ACWR EBE42FE8ACWR-6E-E |
4GB Fully Buffered DIMM
|
Elpida Memory
|
| EBE41FE4ACFT EBE41FE4ACFT-6E-E |
4GB Fully Buffered DIMM
|
Elpida Memory
|
| EBE11FD8AGFD-5C-E EBE11FD8AGFD-6E-E EBE11FD8AGFD E |
1GB Fully Buffered DIMM
|
Elpida Memory
|
| 48206-0001 48206-0002 48206-0003 48206-0004 48206- |
Fully Buffered DIMM Socket 240 CircuitWith Color Options
|
Molex Electronics Ltd.
|
| 0780610062 |
1.00mm (.039) Pitch Fully Buffered DIMM Socket, Vertical, Through Hole, 0.76u (30u) Gold(Au) Selective Plating
|
Molex Electronics Ltd.
|
| 0879170001 87917-0001 |
1.00mm (.039) Pitch Fully Buffered DIMM Socket, 28.5掳 Angle, Through Hole, 240 Circuits, with Beveled Metal Pins, with Off-White Latches
1.00mm (.039) Pitch Fully Buffered DIMM Socket, 28.5° Angle, Through Hole, 240 Circuits, with Beveled Metal Pins, with Off-White Latches
|
Molex Electronics Ltd.
|
| HYMP125F72CP8D3-C4 HYMP125F72CP8D3-S5 HYMP125F72CP |
240pin Fully Buffered DDR2 SDRAM DIMMs
128M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HYM72V64736T8 HYM72V64736LT8-H |
64Mx72|3.3V|K/H|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Samsung Semiconductor Co., Ltd.
HYNIX SEMICONDUCTOR INC
|
| HYM72V64756BLT8-P HYM72V64756BLT8-S HYM72V64756BT8 |
64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
|
Samsung Semiconductor Co., Ltd.
Leshan Radio Company, Ltd.
Hynix Semiconductor
|
