| PART |
Description |
Maker |
| A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only
70ns 20mA 256K x 8bit CMOS 5.0V-only
100ns 20mA 256K x 8bit CMOS 5.0V-only
120ns 20mA 256K x 8bit CMOS 5.0V-only
150ns 20mA 256K x 8bit CMOS 5.0V-only
90ns 20mA 256K x 8bit CMOS 5.0V-only
55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| 80CNQ045 80CNQ035 80CNQ040 80CNQSM 80CNQ 80CNQSL 8 |
to 85C, Low Ripple & Noise, High Efficiency up to 82%, Low Profile Plastic Case, Single & Dual Ouputs
SCHOTTKY RECTIFIER
45V 80A Schottky Common Cathode Diode in a D61-8-SM package
45V 80A Schottky Common Cathode Diode in a D61-8-SL package
35V 80A Schottky Common Cathode Diode in a D61-8 package
40V 80A Schottky Common Cathode Diode in a D61-8 package
45V 80A Schottky Common Cathode Diode in a D61-8 package
|
IRF[International Rectifier]
|
| EDS-220-Z-LA-I EDS-260-Z-LA-I EDS-370-Z-LA-I EDS-2 |
POSITION, LINEAR SENSOR-INDUCTIVE, 220mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 260mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 370mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 250mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 300mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 100mm, 4-20mA, CYLINDRICAL
|
Micro-Epsilon Group
|
| ZXTN07045EFF-16 |
45V NPN LOW SATURATION TRANSISTOR
|
Diodes Incorporated
|
| DIN3 |
Low Cost 4-20mA Passive Isolated Transmitter
|
Shenzhen Sunyuan
|
| SD20U45SL |
20A/45V Ultra Low VF Schottky Rectifier
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| LBMG |
20mA, 3V to 80V Low Dropout Micropower Linear Regulator
|
Linear Technology Corporation
|
| LTCHK LTCHN LT3014BHVES5 LCHM LCHP LT3014B LT3014B |
20mA, 3V to 80V Low Dropout Micropower Linear Regulator
|
LINER[Linear Technology]
|
| SBL30U45F |
Voltage 45V 30Amp Low VF planar MOS Barrier Schottky Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| K4H560438D-NC/LA0 K4H560838D-NC/LA0 K4H560438D-NC/ |
256Mb sTSOPII 256Mb的sTSOPII
DIODE ZENER SINGLE 300mW 10Vz 20mA-Izt 0.02513 0.1uA-Ir 8 SOT-23 3K/REEL
DIODE ZENER SINGLE 200mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOD-323 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 9.95Vz 20mA-Izt 0.02513 0.1uA-Ir 8 SOT-363 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
