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K7S3236T4C - 1Mx36 & 2Mx18 QDRTM II b4 SRAM

K7S3236T4C_4488167.PDF Datasheet


Part No.	K7S3236T4C K7S3218T4C
Description	1Mx36 & 2Mx18 QDRTM II b4 SRAM
File Size	441.06K / 20 Page
Maker	Samsung semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Full text search : 1Mx36 & 2Mx18 QDRTM II b4 SRAM

Related Part Number

PART	Description	Maker
K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-F	1Mx36 & 2Mx18 QDRTM II b4 SRAM	SAMSUNG SEMICONDUCTOR CO. LTD.
K7B321825M K7B323625M K7B323625M-QC6575	Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 250V; Case Size: 22x50 mm; Packaging: Bulk 1Mx36 & 2Mx18 Synchronous SRAM 1Mx36 & 2Mx18 Synchronous SRAM	SAMSUNG SEMICONDUCTOR CO. LTD.
K7N323601M-QC20 K7N323601M DSK7N323601M K7N323645M	1Mx36 & 2Mx18 Flow-Through NtRAM 1Mx36 & 2Mx18-Bit Pipelined NtRAM	Samsung Electronic SAMSUNG[Samsung semiconductor]
K7A321830C K7A323630C K7A321830C-PC20 K7A323630C-P	1Mx36 and 2Mx18 Synchronous SRAM 1Mx36Mx18同步SRAM	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C	1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM	SAMSUNG[Samsung semiconductor]
K7I321884C K7I323684C	1Mx36 & 2Mx18 DDRII CIO b4 SRAM	Samsung semiconductor
K7R323684MK7R321884MK7R320884M	1Mx36 & 2Mx18 & 4Mx8 QDRII b4 SRAM Data Sheet	Samsung Electronic
IS61DDP2B41M36A/A1/A2 IS61DDP2B42M18A IS61DDP2B42M	2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
IS61DDP2B22M18A IS61DDP2B21M36A/A1/A2 IS61DDP2B22M	2Mx18, 1Mx36 36Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM	Integrated Silicon Solution, Inc
K7P321874C K7P323674C K7P323674C-HC300	1Mx36 & 2Mx18 SRAM 1M X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119	Samsung semiconductor
K7R323682C-FCI20 K7R323682C-FCI25	1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM	Samsung semiconductor

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