| PART |
Description |
Maker |
| IXSH35N135A IXSH35N140A |
1350V high speed IGBT
1400V high speed IGBT
|
IXYS
|
| IXGH25N100AU1 |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| IXGH10N100A IXGH10N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| IXGM17N100A IXGH17N100 IXGH17N100A IXGM17N100 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| IXSM30N60A IXSH30N60 IXSH30N60A IXSM30N60 |
Low VCE(sat) IGBT, High Speed IGBT
|
IXYS[IXYS Corporation]
|
| IXGH40N60 IXGH40N60A IXGM40N60A IXGM40N60 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
| IXGA16N60C2 IXGA16N60C2D1 IXGP16N60C2 IXGP16N60C2D |
HiPerFASTTM IGBT C2-Class High Speed IGBT
|
IXYS Corporation
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| IR2308 IR2308S |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package
|
International Rectifier
|
| RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| Q67078-A4400-A2 BUP200 BUP200SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXSH20N60U1 IXSH20N60AU1 |
Low VCE(sat) IGBT with Diode, High Speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
