| PART |
Description |
Maker |
| 125244 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 136144 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 137141L |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
http://
|
| 137141 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
http://
|
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH4391 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
|
Infineon
|
| TSMF3700 |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
|
Vishay Siliconix
|
| 127124 |
GaAlAs / GaAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| SFH4289 |
GaAlAs-IR-Lumineszenzdiode in SMT-Geh漉se mit Linse GaAlAs Infrared Emitter in SMT Package with lens 发动器红外光在SMT Lumineszenzdiode，盖赫锓林斯本身麻省理工学院在SMT封装的GaAIAs红外发射器与镜头
|
Electronic Theatre Controls, Inc.
ETC
OSRAM GmbH
|
| SFH464E7800 SFH464 Q62702-Q1745 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TSHA620. TSHA6200 TSHA620 TSHA6203 TSHA6201 TSHA62 |
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package 红外发光二极管的GaAIAs在？5毫米（翻 13 / 4）包
GaAlAs Infrared Emitting Diodes in ? 5 mm (T?1 3/4)Package
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
From old datasheet system
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
VISAY[Vishay Siliconix]
|
