| PART |
Description |
Maker |
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
| MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| STK400-030 STK401-340 STK400-010 STK400-020 STK400 |
AF Power Amplifier (Split Power Supply) (20W 20W 20W, THD = 0.4%)
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| CLY2 |
High Power Packaged GaAs FET; 23.5 dBm
|
TriQuint Semiconductor
|
| PB-CMM2000-QT-0000 CMM2000-QT-0G00 CMM2000-QT-0G0T |
1.5-6.0 GHz GaAs MMIC Packaged Driver Amplifier
|
Mimix Broadband
|
| CMM0511-QT08 PB-CMM0511-QT-0000 CMM0511-QT |
5.0-14.0 GHz GaAs MMIC Packaged Driver Amplifier
|
http://
Mimix Broadband
|
| CMM1118-QT-0G00 CMM1118-QT-0G0T PB-CMM1118-0000 CM |
11.0-20.0 GHz GaAs MMIC Packaged Driver Amplifier
|
MIMIX[Mimix Broadband]
|
| XL1007-QT07 XL1007-QT XL1007-QT-EV1 |
3.5-8.0 GHz GaAs MMIC Packaged Low Noise Amplifier
|
Mimix Broadband
|
| TC2381 |
Low Noise and Medium Power Packaged GaAs FETs
|
Transcom, Inc.
|
