| PART |
Description |
Maker |
| CY7C1314BV18-167BZXC |
18-Mbit QDRII SRAM 2 Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3618CB R1 |
36-Mbit QDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
| R1QFA7218AB R1QCA7218AB R1QCA7236AB R1QLA7236AB R1 |
72-Mbit QDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
| CY7C2163KV18-450BZXI CY7C2163KV18-550BZXI CY7C2165 |
18-Mbit QDRII SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
|
Cypress
|
| UPD44325084 UPD44325084F5-E50-EQ2 UPD44325094F5-E5 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM4个字爆发运作
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM个字爆发运作
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, FBGA-165
|
NEC Corp.
NEC, Corp.
|
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| UPD44165084 UPD44165084F5-E60-EQ1 UPD44165364F5-E6 |
18M-BIT QDRII SRAM 4-WORD BURST OPERATION 1800万位推出QDRII SRAM4个字爆发运作
18M-BIT QDRII SRAM 4-WORD BURST OPERATION 1800万位推出QDRII SRAM个字爆发运作
|
NEC Corp.
NEC, Corp.
|
| CY7C1471V25-100AXC CY7C1473V25-100AXI CY7C1473V25- |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
|
| SST31LF043A-70-4C-WI SST31LF041-300-4E-WH SST31LF0 |
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位的SRAM ComboMemory
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位SRAM ComboMemory
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32
XTAL MTL SMT HC49/USM 4 Mbit闪存1兆位56千位的SRAM ComboMemory
XTAL CER SMT 7X5 2PAD
16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23
DIODE SWITCH 75V 350MW SOT-23
RECTIFIER SCHOTTKY SINGLE 5A 60V 175A-Ifsm 0.7Vf 0.5A-IR SMC 3K/REEL
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| SST31LF021-300-4E-WH SST31LF021E-300-4E-WH SST31LF |
2 Mbit Flash 1 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32
2 Mbit Flash 1 Mbit SRAM ComboMemory 2 Mbit闪存1兆位的SRAM ComboMemory
|
Silicon Storage Technology, Inc.
|
| UPD44165082F5-E60-EQ1 UPD44165182F5-E60-EQ1 UPD441 |
18M-BIT QDRII SRAM 2-WORD BURST OPERATION 1800万位推出QDRII SRAM字爆发运
|
NEC Corp.
NEC, Corp.
|
