| PART |
Description |
Maker |
| EM74XXX |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| K6F1016U4C-EF70 DS_K6F1016U4C K6F1016U4C-AF55 K6F1 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| EM6161FP16CW-45LF EM6161FP8CW-45LF EM6161FS16CW-45 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic Sol...
Emerging Memory & Logic...
|
| EM610FV16BW-12S EM610FV16BW-85L EM610FV16BW-85S EM |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
http://
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic Sol...
Emerging Memory & Logic...
|
| K6F8016R6B K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EM640FR16DW-10L EM640FS16DW-10L EM641FR16DW-10L EM |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
http://
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| K6F1616T6B-TF70 K6F1616T6B-TF55 K6F1616T6B K6F1616 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 100万x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
| HY62SF16404E-SF HY62SF16404E-SFI HY62SF16404E-DF H |
256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM
|
Hynix Semiconductor
|
| K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| IC41C1665 IS41LV1665 IS41LV1665-40K IC41LV1665 IC4 |
RES 100 OHM 5% 1/3W R1210
64K x16 bit Dynamic RAM with Fast Page Mode 64K的x16位动态随机存储器和快速页面模
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
TE Connectivity, Ltd.
|
