| PART |
Description |
Maker |
| KM23C64000G |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY51V65173HGJT |
4Mx16|3.3V|4K|6|FP/EDO DRAM - 64M 4Mx16 | 3.3 | 4K的| 6 |计划生育/ EDO公司的DRAM - 6400
|
Citizen Finetech Miyota
|
| EMC326SP16AJV-90L EMC326SP16AJV-90LF EMC326SP16AJV |
2Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
|
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung Electronic
Samsung semiconductor
|
| K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
|
SAMSUNG[Samsung semiconductor]
|
| MC10H160 MC10H160FN MC10H160L MC10H160P MC10H160M |
12-Bit Parity Generator-Checker
Dual In/Single Out Autoswitching Power MUX, Auto Sw, Adj. Cur Limit, Adj. Vol Threshold, Sw Status 8-TSSOP -40 to 85
Autoswitching Power Mux 8-SON -40 to 85 10H SERIES, 12-BIT PARITY GENERATOR/CHECKER, TRUE OUTPUT, CDIP16
|
ONSEMI[ON Semiconductor]
|
| MC100E155FN MC100E155FNR2 MC10E155FN MC10E155FNR2 |
5V ECL 6−Bit 2:1 Mux−Latch 10E SERIES, LOW LEVEL TRIGGERED D LATCH, TRUE OUTPUT, PQCC28
5V ECL 6−Bit 2:1 Mux−Latch
|
ONSEMI[ON Semiconductor]
|
| S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写，突发模式CellularRAM的闪存记忆体
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| PI3B16224NBSP PI3B16224 PI3B16224BE PI3B16224B |
3.3V, 12-Bit to 24-Bit DeMux/Mux NanoSwitch
From old datasheet system
PI3B16224
|
Pericom Semiconductor Corp.
PERICOM[Pericom Semiconductor Corporation]
Pericom Technology
|
| PI3L301DA |
3.3V, 16-Bit to 8-Bit, Mux / Demux Gigabit Ethernet Lan Switch (Single Enable)
|
PERRICOM
|
| XRD8799AIQ |
LOW POWER, 2 MSPS, 10-BIT, A/D CONVERTER WITH 8-CHANNEL MUX 8-CH 10-BIT RESISTANCE LADDER ADC, PARALLEL ACCESS, PQFP44
|
Exar, Corp.
|
