| PART |
Description |
Maker |
| 1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| WS128K32NV-17H1MA WS128K32NV-17H1C WS128K32NV-17H1 |
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp.
White Electronic Designs, Corp.
|
| 1206B753K201PTM 1206B753J500PTM 1206B753J250PTM 12 |
CAPACITOR, CERAMIC, MULTILAYER, 200 V, X7R, 0.075 uF, SURFACE MOUNT, 1206 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 50 V, X7R, 0.075 uF, SURFACE MOUNT, 1206 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 25 V, X7R, 0.075 uF, SURFACE MOUNT, 1206 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 100 V, X7R, 0.075 uF, SURFACE MOUNT, 1206 CHIP
|
Novacap
|
| 27210B753JO0 |
CAPACITOR, MICA, 0.075 uF, CHASSIS MOUNT
|
Cornell Dubilier Electronics, Inc.
|
| BAT46-A |
0.075 A, 100 V, SILICON, RECTIFIER DIODE, DO-35
|
DIODES INC
|
| GCX-26/I75.0KHZ |
QUARTZ CRYSTAL RESONATOR, 0.075 MHz
|
GOLLEDGE ELECTRONICS LTD
|
| DSB5712 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 |
0.075 A, SILICON, SIGNAL DIODE, DO-35
SCHOTTKY BARRIER DIODES
|
MICROSEMI[Microsemi Corporation]
|
| SPD30P06P-E4-E6327 |
30 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 ROHS COMPLIANT PACKAGE-3
|
Infineon Technologies AG
|
| STC08DE150HV C08DE150HV |
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| MTW32N20E MTW32N20E_D ON2691 |
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
From old datasheet system
|
Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| STW47NM60ND |
N-channel 600 V, 0.075 Ω typ., 35 A FDmesh II Power MOSFET (with fast diode) in a TO-247 package
|
STMicroelectronics
|
| AUIRFU024N AUIRFR024NTRR AUIRFR024NTRL |
17 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Advanced Planar Technology
Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
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