| PART |
Description |
Maker |
| IDT70P3517 IDT70P3517S233RM IDT70P3517S250RM IDT70 |
512K/256K x36 SYNCHRONOUS DUAL QDR-II
|
Integrated Device Technology
|
| IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IS61VF51218A-6.5B3 |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| GS881E36AD-150 GS881E36AT-225I GS881E36AT-225T GS8 |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 6 ns, PQFP100
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 7.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 5.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 8.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7 ns, PQFP100
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA165
|
GSI Technology, Inc.
|
| IDT71V67802150BQI IDT71V67802150BG IDT71V67602150P |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36，为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线，单周期取
256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
|
Integrated Device Technology, Inc.
|
| MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119
512K X 18 CACHE SRAM, 2.6 ns, PBGA119
256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
FREESCALE SEMICONDUCTOR INC
Motorola, Inc
|
| GS84032T-166 GS84032T-166I GS84032B-166I GS84032B- |
x32 Fast Synchronous SRAM
x36 Fast Synchronous SRAM
256K x 18 128K x 32 128K x 36 4Mb Sync Burst
x18 Fast Synchronous SRAM x18快速同步SRAM
|
Coilcraft, Inc.
|
| GS881E18AD-200 GS881E18AD-200I GS881E18AD-200IT GS |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
|
GSI[GSI Technology]
|
| GS88118AD-133I GS88118AD-150I GS88118AD-200I GS881 |
512K X 18, 256K X 36 9MB SYNCHRONOUS BURST SRAMS
|
GSI[GSI Technology]
|
| GVT71256D36 71256D36 |
256K X 36/512K X 18 SYNCHRONOUS SRAM
From old datasheet system
|
Galvantech
|
|
