| PART |
Description |
Maker |
| EIA1819-1P EIB1819-1P |
18.7-19.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45A2527B |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V7177A C367177A |
From old datasheet system
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| LT5522EUF LT5522EUFTR |
600MHz to 2.7GHz High Signal Level Downconverting Mixer; Package: QFN; No of Pins: 16; Temperature Range: -40°C to 125°C TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC16
400MHz to 2.7GHz High Signal Level Downconverting Mixer
|
Linear Technology, Corp.
|
| MC1471 MC1471C MC1741CDR2 MC1741CP1 MC1741CD MC174 |
Internally Compensated, High Performance Operational Amplifier
From old datasheet system
Internally Compensated / High Performance Operational Amplifier
Internally Compensated, High Performance Operational Amplifier
OP-AMP, 1 MHz BAND WIDTH, PDIP8
|
ONSEMI[ON Semiconductor]
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RFPA2226SQ RFPA2226-EVB1 RFPA2226-EVB2 |
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
|
RF Micro Devices
|
| LT5504EMS8 LT5504 |
800MHz to 2.7GHz RF Measuring Receiver
|
LINER[Linear Technology]
|
| SY87724LHI SY87724LHY SY87724L_06 SY87724L SY87724 |
3.3V AnyRate MUX/DEMUX Up to 2.7GHz
|
MICREL[Micrel Semiconductor]
|
