| PART |
Description |
Maker |
| SFM-2A-1 |
MESFET HIGH IP3 MIXER SURFACE OPTIMIZED BANDWIDTH
OPTIMIZED BANDWIDTH SURFACE MOUNT MODEL
|
SYNERGY MICROWAVE CORPORATION
ETC[ETC]
List of Unclassifed Manufacturers
|
| ISL9N306AS3ST ISL9N306AP3 ISL9N306AS3STNL |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| 540501MED-0842X |
fire alarm markets leading conventional sounder
|
List of Unclassifed Man...
|
| L4411A |
Leading the Industry in High-Performance System Test
|
Agilent(Hewlett-Packard)
|
| S497-0030-10 S497-0250-10 S497-0040-10 S497-0050-1 |
10 TAP LEADING EDGE CONTROL PRECISE DELAY MODULES
|
BEL[Bel Fuse Inc.]
|
| S477-0050-06 S477-0040-06 S477-0030-06 S477-0200-0 |
1 TAP LEADING EDGE CONTROL LOW VOLTAGE DELAY MODULES
|
BEL[Bel Fuse Inc.]
|
| S473-0050-A3 A473-0005-A3 A473-0007-A3 A473-0010-A |
TRIPLE LINE LEADING EDGE CONTROL LOW VOLTAGE DELAY MODULES
|
BEL[Bel Fuse Inc.]
|
| IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH03G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
