| PART |
Description |
Maker |
| PE15A1006 |
40 dB Gain, 1.1 dB NF, 15 dBm, 3.1 GHz to 3.5 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
| LD7215D LD7215 LD7215C |
6 GHz, 3 kW, HELIX TYPE, PPM FOCUSING, HIGH POWER GAIN, FLAT GAIN VARIATION
|
NEC[NEC]
|
| LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫，600 W连续，分之为重点，高功率增益
14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp.
NEC, Corp.
NEC[NEC]
|
| BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SST12LF09-Q3CE |
2.4 GHz High-Gain, High-Efficiency Front-end Module
|
Microchip Technology
|
| RFMA5065-1W-Q7 |
5.0 - 6.5 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| CGD1042H CGD1042H-2015 |
1 GHz, 23 dB gain high output power doubler
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| ACA2784 |
1 GHz, 21 dB Gain High Output Power DoublerAmplifier
|
ANADIGICS, Inc
|
| CGD1044HI |
1 GHz, 25 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
