| PART |
Description |
Maker |
| FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS
HIGH VOLTAGE NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 15GN01MA12 15GN01MA-TL-E ENA1100A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifi er Applications
|
Sanyo Semicon Device
|
| MPI4040R1-1R5-R MPI4040R1-100-R MPI4040R1-4R7-R MP |
High Frequency, High Current Miniature Power Inductors
|
Cooper Bussmann, Inc.
|
| FP0807R1-R07-R FP0807R1-R12-R FP0807R1-R22-R FP080 |
High Current, High Frequency, Power Inductors
|
Cooper Bussmann, Inc.
|
| HG-1012JA HG-2012JA |
(HG-1012JA / HG-2012JA) High Stability High Frequency Oscillator
HIGH-STABILITY HIGH-FREQUENCY OSCILLATOR 高稳定高频振荡器
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| HCP0704 HCP0704-1R0-R HCP0704-1R8-R HCP0704-2R3-R |
1 ELEMENT, 3.3 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP, 0704, ROHS COMPLIANT
High Current, High Frequency, Power Inductors
|
Cooper Bussmann, Inc.
|
| KSC945Y KSC945CG KSC945CL KSC945CO KSC945CR KSC945 |
NPN Epitaxial Silicon Transistor
Audio Frequency Amplifier & High Frequency OSC.
Audio Frequency Amplifier & High Frequency OSC.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
|
