| PART |
Description |
Maker |
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM
256K x 4 Static RAM x4快速页面模式的DRAM
512K x 32 Static RAM x4快速页面模式的DRAM
3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
512K x 24 Static RAM x4快速页面模式的DRAM
2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM
128K x 8 Static RAM 128K的8静态RAM
x4FastPageModeDRAM
|
Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.
|
| BB4EG BB4GK BB4KLX BB4JKX BB4DF BB4NPX |
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL® 32-Mbit (2M x 16) Static RAM
MoBL® 16-Mbit (1M x 16) Static RAM
＂SHIELDING BAG 16 X 18＂＂ Inhalt pro Packung: 10 Stk. “屏蔽袋16 X 18”，“Inhalt亲Packung0沙头角。
|
ON Semiconductor
|
| CY7C1041CV33-12ZSXE CY7C1041CV3308 CY7C1041CV33-10 |
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 256K X 16 STANDARD SRAM, 10 ns, PDSO44
4-Mbit (256K x 16) Static RAM
|
Cypress Semiconductor, Corp.
|
| M24D16161ZA-70BIG |
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
16-Mbit (1M x 16) Pseudo Static RAM
|
Elite Semiconductor Memory Technology, Inc.
Elite Semiconductor Memory Technology Inc.
|
| CYU01M16ZCCU-70BVXI CYU01M16ZCC |
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
16-Mbit (1M x 16) Pseudo Static RAM
|
Cypress Semiconductor, Corp.
|
| CY62167DV30 CY62167DV30L-55BVI CY62167DV30L-55ZI C |
16-Mbit (1M x 16) Static RAM
|
CYPRESS[Cypress Semiconductor]
|
| CY62177DV30 CY62177DV30LL CY62177DV3011 |
32-Mbit (2M x 16) Static RAM
|
Cypress Semiconductor
|
| CY7C1069BV33 CY7C1069BV33-10ZC CY7C1069BV33-10ZI C |
16-Mbit (2M x 8) Static RAM
|
Cypress Semiconductor
|
