| PART |
Description |
Maker |
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
|
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| 2N5655 2N5656 2N5657 |
Power 1A 350V NPN
POWER TRANSISTORS NPN SILICON
Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
| BD237 ON0191 |
From old datasheet system
POWER TRANSISTORS NPN SILICON
Plastic Medium Power Silicon NPN Transistor
CASE 77-09 TO-225AA TYPE
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| MJE182 MJE171 MJE181 MJE172 ON2017 MOTOROLAINC-MJE |
POWER TRANSISTORS COMPLEMENTARY SILICON 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
From old datasheet system
COMPLEMENTARY SLLLCON PLASTLC POWER TRANSLSTORS
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| 2N4922 2N4921 2N4923 2N4921-D |
Medium-Power Plastic NPN Silicon Transistors
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS
|
ONSEMI[ON Semiconductor]
|
| 2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA |
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 9A I(C) | TO-252VAR
DC / DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP / NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
|
SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
|
| 2SB1121 2SD1621 2SD1621U 2SB1121R |
NPN Epitaxial Planar Silicon Transistors High-Current Driver Applications
PNP/NPN Epitaxial Planar Silicon Transistors
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
|
Sanyo
Hitachi,Ltd.
|
| MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE.
NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
| 2N5682 2N5681 2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor
NPN SILICON TRANSISTORS
Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶体管（TO-39金属封装，用于通用、放大器、开关电路）)
|
SEME-LAB[Seme LAB]
Semelab(Magnatec)
|
