PART |
Description |
Maker |
2SK2938 |
Silicon N Channel MOS FET(N娌??MOSFET) Silicon N Channel MOS FET(N沟道MOSFET) 通道场效应晶体管(不适用沟道MOSFET的) From old datasheet system
|
Hitachi,Ltd.
|
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba. TOSHIBA[Toshiba Semiconductor]
|
SSM3K03FE |
100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
2SK1405 |
Silicon N-Channel MOS FET(N娌??MOSFET) From old datasheet system Silicon NPN Triple Diffused
|
Hitachi,Ltd.
|
2SK601 2SK0601 |
Silicon N-Channel MOS FET 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Panasonic, Corp. Panasonic Semiconductor
|
2SJ278MYTR-E 2SJ278 2SJ278MYTL-E |
1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
2SK3022 |
Silicon N-Channel Power F-MOS FET 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Panasonic, Corp. Panasonic Semiconductor
|
RQJ0202VGDQA RQJ0202VGDQATL-E |
2700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3 Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc. Renesas Electronics Corporation
|
RQJ0602EGDQA RQJ0602EGDQATL-E |
1100 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3 Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc. Renesas Electronics Corporation
|
3SK295ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4 Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
|