| PART |
Description |
Maker |
| 2SK3821 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH3359 |
Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH3315 |
Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SJ655 |
High Output MOSFETs
|
SANYO
|
| CPH6316 |
Medium Output MOSFETs
High-Speed Switching Applications
|
Sanyo Semicon Device
|
| 2SC4399 |
ECONOLINE: RUZ - Dual Output from a Single Input Rail- Input/Output Isolation 1kVDC- Output/Output Isolation 1kVDC- Power Sharing on Outputs- UL94V-0 Package Material- Toroidal Magnetics- No Extern. Components Required- Efficiency to 85% 高频通用放大器应
High-Frequency General-Purpose Amp Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Toshiba Semiconductor
|
| IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
| OA100FL16 OA100FL18 OA100NL15 OA100NL19 CA25FL20 C |
1 ELEMENT, 18000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 46000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 16000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 100000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 830 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 130000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7400000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 180000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 40000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 280000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 31000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 260000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 11000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 830000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2300000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 15000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1100000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3200000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 27000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 35000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7700 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 6300000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2500 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 11000000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2600000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4200000 uH, GENERAL PURPOSE INDUCTOR
|
|
| IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
| BA26-601A BB26-601A BA31-910 BB31-910 BA20-601A BA |
CY2304NZ Four Output PCI-X and General Purpose Buffer
5V, 3.3V, ISR™ High-Performance CPLDs
|
Air Cost Control
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
|
