| PART |
Description |
Maker |
| 2SK3822 |
General-Purpose Switching Device Applications
High Output MOSFETs
|
Sanyo Semicon Device
|
| 2SK3708 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
SANYO[Sanyo Semicon Device]
|
| MCH3322 |
Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SJ655 |
High Output MOSFETs
|
SANYO
|
| 2SJ348 |
High Output MOSFETs
|
SANYO
|
| 2SK3833 |
High Output MOSFETs
|
SANYO
|
| 2SC4399 |
ECONOLINE: RUZ - Dual Output from a Single Input Rail- Input/Output Isolation 1kVDC- Output/Output Isolation 1kVDC- Power Sharing on Outputs- UL94V-0 Package Material- Toroidal Magnetics- No Extern. Components Required- Efficiency to 85% 高频通用放大器应
High-Frequency General-Purpose Amp Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Toshiba Semiconductor
|
| IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
| IXFF24N100 IXYSCORP-IXFF24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
|
IXYS Corporation
|
| IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
