| PART |
Description |
Maker |
| UTV005P |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| SST5912T1 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
|
CALOGIC LLC
|
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| MRF181SR1 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
FREESCALE SEMICONDUCTOR INC
|
| BFM35 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
SEMELAB LTD
|
| BF256-5 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
|
MOTOROLA INC
|
| MD5000 |
2 CHANNEL, UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR
|
ON SEMICONDUCTOR
|
|
