| PART |
Description |
Maker |
| 1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| 2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
|
TOSHIBA
|
| TPC8206 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2SK3128 EA09401 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
From old datasheet system
SWITCHING TYPE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATIONS
|
Toshiba Semiconductor
|
| JDP2S01E07 JDP2S01E |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| JDP2S01T07 JDP2S01T |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| 1SV25207 |
VHF~UHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| R414730000 |
ATTENUATOR, N 2W 30DB 12.4GHZATTENUATOR, N 2W 30DB 12.4GHZ; Impedance:50R; Attenuation:30dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
| 2SC5279 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| 1SV271 |
DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS)
|
Toshiba Semiconductor
|
