PART |
Description |
Maker |
MMG3007NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
MMA20312BT1 |
Heterojunction Bipolar Transistor Technology
|
Freescale Semiconductor
|
MMG3007NT1 |
Heterojunction Bipolar Transistor(InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3014NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
MMG3006NT1 MMG3006NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3002NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
MOTOROLA[Motorola, Inc]
|
MMA20312B |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor...
|
BFP740F |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
|
Infineon
|
BC847BS09 |
NPN GENERAL PURPOSE DUAL TRANSIS
|
Pan Jit International Inc.
|
IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|